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Reduction of gate current in AlSb/InAs HEMTs using a dual-gate design

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3 Author(s)
Boos, J.B. ; Naval Res. Lab., Washington, DC, USA ; Kruppa, W. ; Park, D.

Dual-gate AlSb/InAs HEMTs with 0.4 μm gate lengths have been fabricated, and exhibit a significant reduction in the gate leakage current associated with holes generated by impact ionisation. These HEMTs also have decreased output conductance and increased low frequency unilateral gain compared to single gate devices

Published in:

Electronics Letters  (Volume:32 ,  Issue: 17 )