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Electrical Stability of Hexagonal a-Si:H TFTs

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3 Author(s)
Geonwook Yoo ; Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI, USA ; Hojin Lee ; Jerzy Kanicki

In this letter, we study the current-temperature-stress-induced electrical instability of single and multiple hexagonal (HEX) hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) connected in parallel. The influence of the threshold voltage shift of a single HEX TFT on the overall electrical performance of multiple HEX TFTs is discussed. The results indicate that a-Si:H HEX TFTs have an improved electrical stability and a threshold voltage shift linear dependence on a number of connected HEX-TFT units.

Published in:

IEEE Electron Device Letters  (Volume:31 ,  Issue: 1 )