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Low-Power and Nanosecond Switching in Robust Hafnium Oxide Resistive Memory With a Thin Ti Cap

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9 Author(s)
Lee, H.Y. ; Electron. & Optoelectron. Res. Lab., Ind. Technol. Res. Inst., Hsinchu, Taiwan ; Chen, Y.S. ; Chen, P.S. ; Wu, T.Y.
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The memory performance of hafnium oxide (HfOx)-based resistive memory containing a thin reactive Ti buffer layer can be greatly improved. Due to the excellent ability of Ti to absorb oxygen atoms from the HfOx film after post-metal annealing, a large amount of oxygen vacancies are left in the HfOx layer of the TiN/Ti/HfOx/TiN stacked layer. These oxygen vacancies are crucial to make a memory device with a stable bipolar resistive switching behavior. Aside from the benefits of low operation power and large on/off ratio (>100), this memory also exhibits reliable switching endurance (>106 cycles), robust resistance states (200??C), high device yield (~100%), and fast switching speed (<10 ns).

Published in:

Electron Device Letters, IEEE  (Volume:31 ,  Issue: 1 )