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Electrooptical Modulating Device Based on a CMOS-Compatible {bm \alpha } -Si:H/ {bm \alpha } -SiCN Multistack Waveguide

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4 Author(s)
Rao, S. ; Dept. of Inf. Sci., Mediterranea Univ. of Reggio Calabria, Reggio Calabria, Italy ; Della Corte, F.G. ; Summonte, C. ; Suriano, F.

In this paper, we report results on a field-effect-induced light modulation at λ = 1.55 μm in a high-index-contrast waveguide based on a multisilicon-on-insulator platform. The device is realized with the hydrogenated amorphous silicon (α-Si:H) technology, and it is suitable for monolithic integration in a CMOS IC. The device exploits the free-carrier optical absorption electrically induced in the semiconductor core waveguide. The amorphous silicon waveguiding layer contains several thin dielectric films of amorphous silicon carbonitride (α-SiCN) embedded along its thickness, thus highly enhancing the absorbing action of the modulator held in the on state.

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Selected Topics in Quantum Electronics, IEEE Journal of  (Volume:16 ,  Issue: 1 )