By Topic

Oxide Electronics by Spatial Atomic Layer Deposition

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
David H. Levy ; Eastman Kodak Co., Rochester, NY, USA ; Shelby F. Nelson ; Diane Freeman

We report on zinc oxide (ZnO)-based devices produced by a fast, open-air atomic layer deposition (ALD) process relying upon the spatial isolation of reactive gases. At deposition rates of greater than 100 Aring per minute, ZnO-based thin-film transistors by spatial atomic layer deposition (S-ALD) show mobility above 15 cm2/Vs and excellent stability. Measurement and modeling of the gas isolation in the deposition head is discussed. Saturation curves obtained for aluminum oxide (Al2O3) growth using trimethylaluminum and water are shown to be consistent with chamber ALD systems. Finally, the ability of this new ALD process to leverage patterning by using poly(methyl methacrylate) (PMMA) as a growth inhibitor for selective area deposition is discussed. Relatively thin films of PMMA (~ 40 Aring) are shown to be capable of inhibiting the growth of ZnO for at least 1200 ALD cycles.

Published in:

Journal of Display Technology  (Volume:5 ,  Issue: 12 )