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An Amorphous Indium–Gallium–Zinc–Oxide Active Matrix Electroluminescent Pixel

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5 Author(s)
Wellenius, Patrick ; Electr. & Comput. Eng. Dept., North Carolina State Univ., Raleigh, NC, USA ; Suresh, Arun ; Haojun Luo ; Lunardi, L.M.
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In this study, an active matrix pixel was fabricated and characterized using indium gallium zinc oxide (IGZO) thin-film transistors and a novel electroluminescent (EL) Eu:IGZO thin-film phosphor. The results show that even large and unoptimized IGZO devices are capable of modulating at the frequencies necessary for modern display technology. Furthermore, we demonstrate a rare-earth doped amorphous-oxide semiconductor (AOS) EL phosphor that can be modulated via a TFT.

Published in:

Display Technology, Journal of  (Volume:5 ,  Issue: 12 )

Date of Publication:

Dec. 2009

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