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Self-Aligned Top-Gate Coplanar In-Ga-Zn-O Thin-Film Transistors

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4 Author(s)
Cheng-Han Wu ; Grad. Inst. of Electron. Eng., Nat. Taiwan Univ., Taipei, Taiwan ; Hsing-Hung Hsieh ; Chih-Wei Chien ; Chung-Chih Wu

Self-aligned techniques are often used in conventional CMOS and Si-based thin-film transistors (TFTs) technologies due to various merits. In this paper, we report self-aligned coplanar top-gate InGaZnO TFTs using PECVD a-SiNinfin:H patterned to have low hydrogen content in the channel region and high hydrogen content in the source/drain region. After annealing to induce hydrogen diffusion from a-SiNinfin:H into the oxide semiconductor, the source-drain regions become more conductive and yet the channel region remains suitable for TFT operation, yielding a working self-aligned TFT structure. Such fabrication involves neither back-side exposure nor ion implantation, and thus may be compatible with the typical and cost-effective TFT manufacturing.

Published in:

Journal of Display Technology  (Volume:5 ,  Issue: 12 )