Cart (Loading....) | Create Account
Close category search window
 

Reaction pathway analysis for dislocation nucleation from a Ni surface step

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Hara, Shotaro ; Department of Mechanical Engineering, The University of Tokyo, Tokyo 113-0033, Japan ; Izumi, Satoshi ; Sakai, Shinsuke

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3254178 

Threshold strain required for a thermally activated dislocation nucleation from a Ni surface step has been measured using an atomistic-based reaction pathway analysis. We show that the saddle-point configuration and the stress-dependent activation energy are strongly influenced by the presence of a surface step. Our results provide insight into the previous experimental findings concerning the mechanism on a coherency loss at the Ni/Cu(001) interface. We conclude that the coherency strain caused by a lattice mismatch between Ni and Cu does not yield a sufficient driving force for the dislocation nucleation.

Published in:

Journal of Applied Physics  (Volume:106 ,  Issue: 9 )

Date of Publication:

Nov 2009

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.