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Optically active Er3+ ions in SiO2 codoped with Si nanoclusters

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12 Author(s)
Navarro-Urrios, D. ; MIND-IN2UB, Dept. Electrònica, Universitat de Barcelona, Martí i Franquès 1, 08028 Barcelona, CAT, Spain ; Lebour, Y. ; Jambois, O. ; Garrido, B.
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Optical properties of directly excited erbium (Er3+) ions have been studied in silicon rich silicon oxide materials codoped with Er3+. The spectral dependence of the direct excitation cross section dir) of the Er3+ atomic 4I15/24I11/2 transition (around 0.98 μm) has been measured by time resolved μ-photoluminescence measurements. We have determined that σdir is 9.0±1.5×10-21 cm2 at 983 nm, at least twice larger than the value determined on a stoichiometric SiO2 matrix. This result, in combination with a measurement of the population of excited Er3+ as a function of the pumping flux, has allowed quantifying accurately the amount of optically active Er3+. This concentration is, in the best of the cases, 26% of the total Er population measured by secondary ion mass spectrometry, which means that only this percentage could provide optical gain in an eventual optical amplifier based on this material.

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Journal of Applied Physics  (Volume:106 ,  Issue: 9 )