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O2 post deposition anneal of Al2O3 blocking dielectric for higher performance and reliability of TANOS Flash memory

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15 Author(s)

TANOS Charge Trap Flash Approach (CTF) is a candidate to replace floating gate approach (FG) for sub-32 nm technology node. However the main challenge for TANOS is its poor retention characteristics. In this paper, we show that by performing an O2 anneal after Al2O3 deposition the charge retention is considerably improved as well as the other memory characteristics: program, erase, endurance.

Published in:

Solid State Device Research Conference, 2009. ESSDERC '09. Proceedings of the European

Date of Conference:

14-18 Sept. 2009