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AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs) using La2O3 as gate oxide by electron-beam evaporated have been investigated and compared with the regular HEMTs . The La2O3 thin film achieved a good thermal stability after 200degC, 400degC and 600degC post-deposition annealing due to its high binding energy (835.7 eV) characteristics. Our measurements have shown that La2O3 MOS-HEMTs exhibiting the best characteristics, including the lowest gate leakage current, the largest gate voltage swing, and pulsed-mode operation. In addition, a negligible hysteresis voltage shift in the C-V curve can be improved significantly after high temperatures annealing.
Date of Conference: 14-18 Sept. 2009