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Magnetic field induced gate leakage current in 65nm nMOS transistors

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5 Author(s)
Gutierrez-D, E.A. ; Dept. of Electron., INAOE, Puebla, Mexico ; Molina-R, J. ; Garcia-R, P.J. ; Martinez-C, J.
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We present experimental evidence that reveals steady state and transient magnetic fields modulate gate current leakage in MOS transistors and produce channel current interference. This steady- and transient-state electromagnetic interference is attributed to surface channel charge and mobility space- and time-modulation, as validated by Minimos-NT electromagnetic numerical simulations.

Published in:
Solid State Device Research Conference, 2009. ESSDERC '09. Proceedings of the European

Date of Conference: 14-18 Sept. 2009

Page(s):
185 - 188
ISSN :
1930-8876
E-ISBN :
978-1-4244-4353-6
Print ISBN:
978-1-4244-4351-2
INSPEC Accession Number:
10976151
Conference Location :
Athens
Digital Object Identifier :
10.1109/ESSDERC.2009.5331452
Product Type:
Conference Publications

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