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RF performance degradation in 100-nm metal gate/high-k dielectric nMOSFET by hot carrier effects

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9 Author(s)
Hyun Chul Sagong ; Dept. of Electron. & Electr. Eng., Pohang Univ. of Sci. & Technol. (POSTECH), Pohang, South Korea ; Kyong Taek Lee ; Chang Yong Kang ; Gil-Bok Choi
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RF performances of 100-nm metal gate/high-k dielectric nMOSFET and parameters degradation by hot carrier injection to apply to RF integrated circuits are investigated. The attained nMOSFETs RF performances are 132-GHz fT and 44-GHz fmax. In addition to RF figures of merit (FOM, fT and fmax), variation of capacitance and resistance is monitored to study hot carrier effects.

Published in:

Solid State Device Research Conference, 2009. ESSDERC '09. Proceedings of the European

Date of Conference:

14-18 Sept. 2009