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Tunable band-stop filter based on single RF MEMS capacitive shunt switch with meander arm inductance

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4 Author(s)
Montserrat Fernandez-Bolanos ; Nanoelectronic Device Laboratory (NanoLab), École Polytechnique Fédérale de Lausanne (EPFL) Lausanne, CH-1015, Switzerland ; Catherine Dehollain ; Pierre Nicole ; Adrian M. Ionescu

This paper presents a novel high-frequency filter concept based on a single MEMS capacitive shunt structure using meander arm inductance. Tuning ranges of the central frequency in the order of 55% are experimentally demonstrated for filters operating between 13.5 GHz to 30 GHz and 17 GHz to 37 GHz. A low transmission loss of 0.44 dB and a rejection level of -20.5 dB at 17 GHz are reported. The outstanding tuning range is due to the simultaneous tunability of the MEMS capacitive switch (with a capacitance ratio Gt 1.5) and the exploitation of the voltage-controlled capacitance coupling between the meander arm inductance and the substrate.

Published in:

2009 Proceedings of the European Solid State Device Research Conference

Date of Conference:

14-18 Sept. 2009