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A new method for determining the secondary electron yield dependence on ion energy for plasma exposed surfaces

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2 Author(s)
En, William ; Dept. of Electr. Eng., California Univ., Berkeley, CA, USA ; Cheung, Nathan W.

A new experimental method for determining the secondary electron yield for plasma exposed surfaces is described. From the measurement of the plasma condition and the total current generated when a voltage pulse is applied to a target material exposed to a plasma, the dependence of the secondary electron yield of that target on ion energy can be extracted. The secondary electron yield is determined by an analytical model of the plasma ion, electron, and displacement currents. Experimental results for an aluminum target correlate well with previous secondary electron measurements which used a traditional technique. Secondary electrons yield data of other materials: single crystal silicon, aluminum, titanium nitride, and silicon dioxide are also extracted

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Plasma Science, IEEE Transactions on  (Volume:24 ,  Issue: 3 )