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Effect of Intensity Modulated Optical Illumination on the Y Parameters of the GaAs MESFET

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2 Author(s)
Mishra, B.K. ; EXTC Deptt., T.C.E.T., Mumbai, India ; Jolly, L.

In this paper the effect of an intensity-modulated optical signal on the Y parameters of a MESFET is studied theoretically. It shows that at a constant gate voltage the drain current of the device can be controlled by the intensity of incident optical power density and the frequency of the modulating signal frequency because the Y parameters of the device change with the intensity of incident optical power density and the frequency of the modulating signal.

Published in:

Advances in Recent Technologies in Communication and Computing, 2009. ARTCom '09. International Conference on

Date of Conference:

27-28 Oct. 2009

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