Cart (Loading....) | Create Account
Close category search window

Effect of Intensity Modulated Optical Illumination on the Y Parameters of the GaAs MESFET

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Mishra, B.K. ; EXTC Deptt., T.C.E.T., Mumbai, India ; Jolly, L.

In this paper the effect of an intensity-modulated optical signal on the Y parameters of a MESFET is studied theoretically. It shows that at a constant gate voltage the drain current of the device can be controlled by the intensity of incident optical power density and the frequency of the modulating signal frequency because the Y parameters of the device change with the intensity of incident optical power density and the frequency of the modulating signal.

Published in:

Advances in Recent Technologies in Communication and Computing, 2009. ARTCom '09. International Conference on

Date of Conference:

27-28 Oct. 2009

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.