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A 60GHz power amplifier with 14.5dBm saturation power and 25% peak PAE in CMOS 65nm SOI

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9 Author(s)

A 60 GHz wideband power amplifier (PA) is fabricated in standard CMOS SOI 65 nm process. The PA is constituted by two cascode stages. Input, output and inter-stage matching use coplanar wave guide (CPW) transmission lines that have low losses thanks to the high resistivity SOI substrate. The PA measurements are carried out for supply voltages VDD going from 1.2 V to 2.6 V and achieve a saturation power of 10 dBm to 16.5 dBm respectively. The peak power added efficiency is higher than 20% for all applied VDD values.

Published in:

ESSCIRC, 2009. ESSCIRC '09. Proceedings of

Date of Conference:

14-18 Sept. 2009