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Low-noise ESD-protected 24 GHz receiver for radar applications in SiGe:C technology

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6 Author(s)
Issakov, V. ; Dept. of High-Freq. Electron., Univ. of Paderborn, Paderborn, Germany ; Knapp, H. ; Magrini, F. ; Thiede, A.
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This paper presents a low-noise ESD-protected 24 GHz receiver in Infineon's B7HF200 SiGe technology. The fully differential circuit integrates a low noise amplifier (LNA), two low-noise mixers and polyphase filters for on-chip quadrature generation. The front-end has been designed to meet high robustness requirements for industrial or automotive applications. It offers ESD hardness of 1.5 A Transmission Line Pulse (TLP) failure current on the RF pins, which corresponds to HBM protection above 2 kV. Furthermore, the performance variation of key parameters has been analyzed in measurement over a wide range of temperatures from -40degC to 125degC. The receiver offers a conversion gain of 21.5 dBand a very low noise figure of 3.1 dB at the center frequency of 24 GHz. The circuit exhibits a linearity of -20.5 dBm and -11 dBm input-referred 1dB compression point and IIP3, respectively. The front-end consumes 39 mA from a single 3.3 V supply. The chip area including pads is 1 mm2.

Published in:

ESSCIRC, 2009. ESSCIRC '09. Proceedings of

Date of Conference:

14-18 Sept. 2009

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