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A 2.4-GHz 24-dBm SOI CMOS power amplifier with on-chip tunable matching network for enhanced efficiency in back-off

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3 Author(s)
Carrara, F. ; Fac. di Ing., Univ. di Catania, Catania, Italy ; Presti, C.D. ; Palmisano, G.

In this work, the potential of load adaptation for enhanced back-off efficiency in RF power amplifiers (PAs) is investigated through a 0.13-mum silicon-on-insulator (SOI) CMOS fabrication technology. To this aim, the first CMOS PA with fully integrated reconfigurable output matching network is presented. The PA delivers a 24-dBm maximum output power while operating at 2.4 GHz and 2-V supply voltage. A significant efficiency improvement of up to 34% is achieved through load adaptation, peak efficiency being as high as 65%. Linear operation is also demonstrated under two-tone excitation, since a 16-dBm output power is attained while complying with a -40-dBc IM3 specification.

Published in:

ESSCIRC, 2009. ESSCIRC '09. Proceedings of

Date of Conference:

14-18 Sept. 2009