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Pulsed time-of-flight 3D-CMOS imaging using photogate-based active pixel sensors

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6 Author(s)
Spickermann, A. ; Fraunhofer Inst. for Microelectron. Circuits & Syst. (IMS), Duisburg, Germany ; Durini, D. ; Brocker, S. ; Brockherde, W.
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A novel time-of-flight (ToF) 3D-image sensor based on photogate (PG) active pixel structures fabricated in a standard 0.35 mum CMOS process is presented. Distance measurements are performed using a pulsed near-infrared (lambda = 905 nm) laser with pulse widths of 30 ns to 60 ns for distance measurements up to 9 m. The developed ToF pixel consists of a photogate (APG = 30 x 30 mum2) and four floating diffusion (FD) readout nodes, which enable the detection of reflected laser pulse delay and efficient ambient light suppression. Our fabricated sensor contains 4 x 16 pixels and exhibits a dynamic range of 56 dB and a noise equivalent power of 4.46 W/m2 using a single laser pulse.

Published in:

ESSCIRC, 2009. ESSCIRC '09. Proceedings of

Date of Conference:

14-18 Sept. 2009