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Drive Currents and Leakage Currents in InSb and InAs Nanowire and Carbon Nanotube Band-to-Band Tunneling FETs

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2 Author(s)
Khayer, M.A. ; Dept. of Electr. Eng., Univ. of California Riverside, Riverside, CA, USA ; Lake, R.K.

The prototypical device to exploit cold carrier injection is the nanowire (NW) or carbon nanotube (CNT) band-to-band tunneling field-effect transistor. Understanding the effect of material choice and NW or CNT diameter on the drive and leakage currents is critical. A zero-order analytical approach is described for assessing and comparing the effect of different materials and diameters on the drive current, the leakage current, and the required electric fields.

Published in:

Electron Device Letters, IEEE  (Volume:30 ,  Issue: 12 )

Date of Publication:

Dec. 2009

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