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Recent Advances in ZnO-Based Light-Emitting Diodes

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4 Author(s)
Choi, Yong-Seok ; Dept. of Nanobio Mater. & Electron., GIST, Gwangju, South Korea ; Kang, Jang-Won ; Dae-Kue Hwang ; Park, Seong-Ju

ZnO has attracted considerable attention for optical device applications because of several potential advantages over GaN, such as commercial availability of bulk single crystals and a larger exciton binding energy (~60 meV compared with ~25 meV for GaN). Recent improvements in the control of background conductivity of ZnO and demonstrations of p-type doping have intensified interest in this material for applications in light-emitting diodes (LEDs). In this paper, we summarize recent progress in ZnO-based LEDs. Physical and electrical properties, bandgap engineering, and growth of n- and p-type ZnO thin films are also reviewed.

Published in:

Electron Devices, IEEE Transactions on  (Volume:57 ,  Issue: 1 )

Date of Publication:

Jan. 2010

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