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Silicon Modulators and Germanium Photodetectors on SOI: Monolithic Integration, Compatibility, and Performance Optimization

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8 Author(s)
Tsung-Yang Liow ; Inst. of Microelectron., Agency for Sci., Singapore, Singapore ; Kah-Wee Ang ; Qing Fang ; Song, Jun-Feng
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Si modulators and Ge photodetectors are monolithically integrated on Si-on-insulator. The carrier-depletion-type Si modulators achieved high modulation efficiency and speed (V ?? L ?? = 2.56 V??cm, 10 Gb/s). Low-voltage operation (V RF = 1 V pp) was also demonstrated. Introducing a low-thermal-budget postepitaxy anneal improves the performance of the Ge photodetectors, thus resulting in significantly improved dark current. The responsivity and speed in the low-voltage regime are also enhanced, which enhances low-voltage or even short-circuit (V Bias = 0 V) operation.

Published in:

Selected Topics in Quantum Electronics, IEEE Journal of  (Volume:16 ,  Issue: 1 )

Date of Publication:

Jan.-feb. 2010

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