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We demonstrate, to the best of our knowledge, the first electrooptic ring-assisted Mach-Zehnder interferometric (RAMZI) modulator in a CMOS-compatible technology. The RAMZI modulator is manufactured on a CMOS-compatible platform and entirely fabricated in a commercial CMOS foundry. We demonstrate a small-signal 3-dB bandwidth >15 GHz in a silicon-based carrier-depletion modulator with a 2-V??cm V??L product, which is approximately two times smaller than previously reported. We achieved a 10-Gb/s eye diagram with a 2-dB extinction ratio using a 4-Vp-p drive in a modulator with a 680-??m optic/RF interaction region. In addition, we demonstrate internal bandwidth equalization within the tunable CMOS-compatible RAMZI modulator, and discuss the optical carrier and modulation sideband response, and relaxation characteristics that lead to this behavior within resonant modulators.