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High-resolution XRD analysis and device characteristics of InAs/GaSb strained-layer superlattice photodetector

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6 Author(s)

Type-II InAs/GaSb (8/8-ML) strained-layer superlattice (SLS) were grown, and analyzed by high-resolution X-ray diffraction (XRD). The satellite peaks of XRD show a strain transition from compressive to tensile. The responsivity of discrete SLS photodetectors (P=150) shows a cutoff wavelength of ~5 mum, and the temperature dependence gives an activation energy of 275 meV corresponding to the transition energy of HH1-CB.

Published in:

Infrared, Millimeter, and Terahertz Waves, 2009. IRMMW-THz 2009. 34th International Conference on

Date of Conference:

21-25 Sept. 2009