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Cavity length and doping dependence of 1.5- mu m GaInAs/GaInAsP multiple quantum well laser characteristics

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10 Author(s)
Zah, C.E. ; Bellcore, Red Bank, NJ, USA ; Bhat, R. ; Menocal, S.G. ; Favire, F.
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High-power, 1.5- mu m, ridge-waveguide lasers with GaInAs/GaInAsP multiple-quantum-well active layers are discussed. For 1-mm-long devices, a threshold current of 35 mA and an output power of 62 mW per facet were measured. The cavity-length and doping dependence of the threshold current, quantum efficiency, and resonant frequency were investigated experimentally. With heavy Zn doping in the barrier layers, an increase in differential gain by a factor of 1.8 was observed.<>

Published in:

Photonics Technology Letters, IEEE  (Volume:2 ,  Issue: 4 )

Date of Publication:

April 1990

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