Referenced Items are not available for this document.
High-power, 1.5- mu m, ridge-waveguide lasers with GaInAs/GaInAsP multiple-quantum-well active layers are discussed. For 1-mm-long devices, a threshold current of 35 mA and an output power of 62 mW per facet were measured. The cavity-length and doping dependence of the threshold current, quantum efficiency, and resonant frequency were investigated experimentally. With heavy Zn doping in the barrier layers, an increase in differential gain by a factor of 1.8 was observed.<
Published in:
Photonics Technology Letters, IEEE
(Volume:2
,
Issue:
4
)
Date of Publication: April 1990
- Page(s):
- 231 - 233
- ISSN :
- 1041-1135
- INSPEC Accession Number:
- 3674311
- Digital Object Identifier :
- 10.1109/68.53245
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- April 1990
- Sponsored by :
- IEEE Photonics Society
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