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Ultrafast, dual-depletion region, InGaAs/InP p-i-n detector

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2 Author(s)
Effenberger, F.J. ; Discovery Semicond. Inc., Cranbury, NJ, USA ; Joshi, A.M.

The design of a new kind of photodetector, the dual-depletion region p-i-n photodetector, is presented. This vertical detector has a parasitic capacitance and transit time that can be controlled semi-independently. This eases the classical tradeoff between these two speed limiting factors, allowing the design of large, fast detectors. A theoretical analysis of the transit time effect and the capacitance effect is made. This analysis is then used to compute optimum design parameters

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Lightwave Technology, Journal of  (Volume:14 ,  Issue: 8 )