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Analyze of temporal and random variability of a 45nm SOI SRAM cell

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1 Author(s)
Laplanche, Y. ; ARM, Grenoble, France

This paper presents the analysis of a 45 nm SOI SRAM cell variability including history effects and random variability. This leads to an accurate margin calculation.

Published in:

SOI Conference, 2009 IEEE International

Date of Conference:

5-8 Oct. 2009