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Results on aligned SiO2/SiO2 direct wafer-to-wafer low temperature bonding for 3D integration

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5 Author(s)

To meet future 3D stacking requirements on wafer-to-wafer level, we successfully demonstrate oxide-oxide direct bonding on 200 mm with and without copper level utilizing face-to-face alignment and bonding within one process module as well as on the same chuck.

Published in:

SOI Conference, 2009 IEEE International

Date of Conference:

5-8 Oct. 2009