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An interdigitated stacked p-i-n multiple-quantum-well modulator

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5 Author(s)
Huang, X.R. ; Lab. for Photonics & Quantum Electron., Iowa Univ., Iowa City, IA, USA ; Cheung, S.K. ; Cartwright, A.N. ; Smirl, A.L.
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We demonstrate low-voltage operation of a strained InGaAs-GaAs interdigitated hetero n-i-p-i modulator (or stacked SEED) that is grown and fabricated using a shadow-mask growth technique for making the metal contacts to the n- and p-layers separately. An absorption change of 6/spl times/10/sup 3/ cm/sup -1/ with an applied bias as low as /spl sim/1 V is observed in an unoptimized structure. Optical switching of the unbiased structure is also demonstrated.

Published in:

Photonics Technology Letters, IEEE  (Volume:8 ,  Issue: 9 )