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Optically-activated gate control (OAGC) for the next-generation SiC-based power electronics devices and applications

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2 Author(s)
Mazumder, S.K. ; Lab. of Energy & Switching Electron. Syst., Univ. of Illinois at Chicago, Chicago, IL, USA ; Sarkar, T.

Novel photonic control of power semiconductor devices for next-generation power electronics applications are discussed with special emphasis on SiC DMOSFET. Key mechanism behind the photonic modulation of the switching dynamics of the SiC DMOSFET is illustrated. Specific aspects of switching loss reduction, compensation for temperature-induced drift, and on-state impedance control of the SiC DMOSFET are discussed along with experimental demonstration. Potential applications include high-power, high-frequency electronics in power systems, pulsed-power, EMI-immune, high power-density automotive and aerospace switching converters etc.

Published in:
Energy Conversion Congress and Exposition, 2009. ECCE 2009. IEEE

Date of Conference: 20-24 Sept. 2009

Page(s):
2285 - 2292
E-ISBN :
978-1-4244-2893-9
Print ISBN:
978-1-4244-2893-9
INSPEC Accession Number:
10965417
Conference Location :
San Jose, CA
Digital Object Identifier :
10.1109/ECCE.2009.5316076
Product Type:
Conference Publications

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