By Topic

GaN Technology for RF Electronics - Development Status in Europe

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Blanck, H. ; United Monolithic Semicond. GmbH, Ulm, Germany ; Splettstosser, J. ; Floriot, D.

GaN technology has gained a lot of attention in Europe over the last few years for various domains including RF electronics. This paper will try to summarize the current status achieved and illustrate it with a few representative examples. Due to the importance of the subject this paper will focus solely on the RF electronics related topics, which should be of major interest in the frame of this conference. Aspects covering material, devices up to circuits and module integration will be addressed.

Published in:

Compound Semiconductor Integrated Circuit Symposium, 2009. CISC 2009. Annual IEEE

Date of Conference:

11-14 Oct. 2009