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0.5-2.5 GHz, 10W MMIC Power Amplifier in GaN HEMT Technology

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5 Author(s)
Krishnamurthy, K. ; High Power Product Line, RF Micro Devices Inc., Charlotte, NC, USA ; Green, D. ; Vetury, R. ; Poulton, M.
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We report a broadband lossy matched GaN on SiC HEMT power amplifier MMIC with 15 dB gain, 0.5-2.5 GHz bandwidth, 9-13.6 W CW output power and 44.9-63.6% drain efficiency over the band. The amplifier operates from a 48 V drain supply and is packaged in a ceramic S08 package. These amplifiers are intended for use in wideband digital communication applications.

Published in:

Compound Semiconductor Integrated Circuit Symposium, 2009. CISC 2009. Annual IEEE

Date of Conference:

11-14 Oct. 2009