Referenced Items are not available for this document.
We report a broadband lossy matched GaN on SiC HEMT power amplifier MMIC with 15 dB gain, 0.5-2.5 GHz bandwidth, 9-13.6 W CW output power and 44.9-63.6% drain efficiency over the band. The amplifier operates from a 48 V drain supply and is packaged in a ceramic S08 package. These amplifiers are intended for use in wideband digital communication applications.
Published in:
Compound Semiconductor Integrated Circuit Symposium, 2009. CISC 2009. Annual IEEE
Date of Conference: 11-14 Oct. 2009
- Page(s):
- 1 - 4
- ISSN :
- 1550-8781
- E-ISBN :
- 978-1-4244-5191-3
- Print ISBN:
- 978-1-4244-5191-3
- INSPEC Accession Number:
- 10964150
- Conference Location :
- Greensboro, NC
- Digital Object Identifier :
- 10.1109/csics.2009.5315739
- Product Type:
- Conference Publications
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