By Topic

A Passive W-Band Imager in 65nm Bulk CMOS

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Tomkins, A. ; Edward S. Rogers Sr. Dept. of Ece, Univ. of Toronto, Toronto, ON, Canada ; Garcia, P. ; Voinigescu, S.P.

A passive imager operating in the W-band around 90 GHz has been realized in a digital 65 nm CMOS process. The imager, occupying only 0.41 mm2, integrates an SPDT switch with 4.2 dB loss and 25 dB isolation, a 5-stage telescopic cascode LNA with 27 dB gain at 90 GHz, and a W-band square-law detector, all consuming less than 33 mA from 1.2 V. The imager, when measured without the input SPDT, has a peak responsivity of over 200 kV/W, and a minimum NEP of less than 0.1 pW/VHz. With the input switch, it achieves a 90 kV/W responsivity and an NEP of 0.2 pW/VHz. This receiver represents the highest frequency imager to be implemented in standard CMOS with this level of integration.

Published in:

Compound Semiconductor Integrated Circuit Symposium, 2009. CISC 2009. Annual IEEE

Date of Conference:

11-14 Oct. 2009