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V-Band Amplifier MMICs Using Multi-Finger InP/GaAsSb DHBT Technology

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10 Author(s)
Godin, J. ; III-V Lab., Alcatel-Thales, Marcoussis, France ; Nodjiadjim, V. ; Riet, M. ; Berdaguer, P.
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We report on the development of a multi-finger InP/GaAsSb DHBT technology, optimized for the fabrication of RF MMICs. Geometry (number of fingers) and structure optimization has allowed to get FT~200 GHz and FMAX>300 GHz, to suit microwave applications. Special attention has been paid to critical thermal behavior. Key devices have been modeled using a modified Gummel-Poon model. Based on these models, and a passive devices library, RF amplifiers have been designed to operate at 60 GHz, fabricated using the developed process, using 2-finger devices, and measured. 1-stage amplifier delivers 5.5 dB, and 2-device 2-stage amplifier achieves up to 10 dB gain.

Published in:

Compound Semiconductor Integrated Circuit Symposium, 2009. CISC 2009. Annual IEEE

Date of Conference:

11-14 Oct. 2009

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