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We report the room temperature negative differential resistance (NDR) phenomenon in nanocomposite heterostructures made of semiconducting quantum dots embedded in conductive polymers. The peak to valley ratio of the current is 91 at room temperature which increases to 2965 at 77 K. The current voltage characteristics are simulated for a double barrier resonant tunneling device formed by semiconducting quantum dots and polymer molecules. The temperature dependence is also simulated and compared with the experimental results. A close agreement is found for the experimental and the simulation results for the location of the NDR peaks.