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An overview of the recent developments in high-voltage power semiconductor MOS-controlled bipolar devices is presented. The insulated gate bipolar transistor (IGBT) technology is explored up to the latest state-of-the-art developments, in terms of cathode cell technology, drift region technology and anode design. MOS-gated thyristors, which are aimed to replace the IGBT are analysed. It is shown that in spite of the recent cathode cell developments to enhance the plasma distribution within the IGBT, a fully optimised MOS gated thyristor still remains the best approach to achieve enhanced Vce(sat) - Eoff trade-offs and negligible temperature coefficient of Vce(sat).