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Evaluating the self-heating thermal resistance of bipolar transistors by DC measurements: A critical review and update

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5 Author(s)
Russo, S. ; Dept. of Biomedics, Electron. & Telecommun. Eng., Univ. of Naples Federico II, Naples, Italy ; d'Alessandro, V. ; La Spina, L. ; Rinaldi, N.
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The most relevant techniques proposed in the literature for the extraction of the self-heating thermal resistance of bipolar transistors from measurements of their DC electrical characteristics are analyzed and compared for both GaAs HBTs and silicon BJTs. A simple procedure is presented to accurately evaluate the thermal resistance of silicon BJTs with non-negligible Early effect, for which traditional HBT-oriented methods are found to be of little value.

Published in:

Bipolar/BiCMOS Circuits and Technology Meeting, 2009. BCTM 2009. IEEE

Date of Conference:

12-14 Oct. 2009

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