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Improved Stress Reliability of Analog Metal–Insulator–Metal Capacitors Using \hbox {TiO}_{2}/\hbox {ZrO}_{2} Dielectrics

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4 Author(s)
Lin, S.H. ; Dept. of Electr. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan ; Chiang, K.C. ; Yeh, F.S. ; Chin, Albert

We have studied the stress reliability of high-kappa Ni/TiO2/ZrO2/TiN metal-insulator-metal capacitors under constant-voltage stress. The increasing TiO2 thickness on ZrO2 improves the 125-degC leakage current, capacitance variation (DeltaC/C), and long-term reliability. For a high density of 26 fF/mum2, good extrapolated ten-year reliability of small DeltaC/C ~ 0.71% is obtained for the Ni/10-nm-TiO2/6.5-nm- ZrO2/ TiN device at 2.5-V operation.

Published in:

Electron Device Letters, IEEE  (Volume:30 ,  Issue: 12 )