By Topic

Heat Removal in Silicon-on-Insulator Integrated Circuits With Graphene Lateral Heat Spreaders

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Subrina, S. ; Dept. of Electr. Eng., Univ. of California at Riverside, Riverside, CA, USA ; Kotchetkov, D. ; Balandin, Alexander A.

Graphene was recently proposed as a material for heat removal owing to its extremely high thermal conductivity. We simulated heat propagation in silicon-on-insulator (SOI) circuits with and without graphene lateral heat spreaders. Numerical solutions of the heat-propagation equations were obtained using the finite-element method. The analysis was focused on the prototype SOI circuits with the metal-oxide-semiconductor field-effect transistors. It was found that the incorporation of graphene or few-layer graphene (FLG) layers with proper heat sinks can substantially lower the temperature of the localized hot spots. The maximum temperature in the transistor channels was studied as function of graphene's thermal conductivity and the thickness of FLG. The developed model and obtained results are important for the design of graphene heat spreaders and interconnects.

Published in:

Electron Device Letters, IEEE  (Volume:30 ,  Issue: 12 )