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Schottky Barrier Height Modulation of Nickel–Dysprosium-Alloy Germanosilicide Contacts for Strained P-FinFETs

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4 Author(s)
Sinha, M. ; Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore, Singapore ; Lee, R. ; Eng Fong Chor ; Yee-Chia Yeo

This letter reports on the fabrication and hole Schottky barrier (PhiB P) modulation of a novel nickel (Ni)dysprosium (Dy)-alloy germanosilicide (NiDySiGe) on silicon-germanium (SiGe). Aluminum (Al) implant is utilized to lower the PhiB P of NiDySiGe from ~0.5 to ~0.12 eV, with a correspondingly increasing Al dose in the range of 0-2 times 1015 atoms/cm2. When integrated as the contact silicide in p-FinFETs (with SiGe source/drain), NiDySiGe with an Al implant dose of 2 times 1014 atoms/cm2 leads to 32% enhancement in Jdsat over p-FinFETs with conventional NiSiGe contacts. Ni-Dy-alloy silicide is a promising single silicide solution for series-resistance reduction in CMOS FinFETs.

Published in:

Electron Device Letters, IEEE  (Volume:30 ,  Issue: 12 )