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High-Performance InGaZnO Thin-Film Transistors Using HfLaO Gate Dielectric

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3 Author(s)
Su, N.C. ; Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan ; Wang, S.J. ; Chin, Albert

In this letter, we report a low-voltage-driven amorphous indium-gallium-zinc oxide thin-film transistor with a high-kappa-value HfLaO gate dielectric. Good characteristics were achieved including a low VT of 0.22 V, small subthreshold swing of 76 mV/dec, high mobility of 25 cm2/ Vmiddots, and large I on/I off ratio of 5 times 107. These good performances are obtained at an operation voltage as low as 2 V. These characteristics are attractive for high-switching-speed and low-power applications.

Published in:

Electron Device Letters, IEEE  (Volume:30 ,  Issue: 12 )

Date of Publication:

Dec. 2009

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