Cart (Loading....) | Create Account
Close category search window

Effects of type of reactor, crystallinity of SiC, and NF3 gas pressure on etching rate and smoothness of SiC surface using NF3 gas plasma

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Tasaka, A. ; Department of Molecular Chemistry and Biochemistry, Faculty of Science and Engineering, Doshisha University, 1-3 Miyako-dani, Tatara, Kyotanabe, Kyoto 610-0321, Japan and Department of Applied Chemistry, Graduate School of Engineering, Doshisha University, 1-3 Miyako-dani, Tatara, Kyotanabe, Kyoto 610-0321, Japan ; Yamada, H. ; Nonoyama, T. ; Kanatani, T.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Polycrystalline β-SiC and single-crystalline 4H-SiC surfaces were etched by reactive ion etching (RIE) using NF3 gas plasma. A smooth surface was obtained on the polycrystalline SiC after RIE at NF3 gas pressures of 2 and 10 Pa for 10 min, and neither spikes nor pillars were formed on it. On the other hand, some pillars were formed on the single-crystalline SiC surface by RIE at NF3 gas pressures of 2 and 10 Pa. Though the absence of carbon-rich regions and SiOx on the outermost surface before etching was confirmed by x-ray photoelectron spectroscopy and Raman analysis, x-ray diffraction analysis revealed that graphite crystallites were present in the single-crystalline SiC bulk. It was concluded that the graphite crystallites acted as masks and the pillars grew up from the graphite crystallites in the single crystalline SiC during RIE.

Published in:

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films  (Volume:27 ,  Issue: 6 )

Date of Publication:

Nov 2009

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.