Scheduled System Maintenance on May 29th, 2015:
IEEE Xplore will be upgraded between 11:00 AM and 10:00 PM EDT. During this time there may be intermittent impact on performance. We apologize for any inconvenience.
By Topic

A 0.5 V 4.85 Mbps Dual-Mode Baseband Transceiver With Extended Frequency Calibration for Biotelemetry Applications

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Tsan-Wen Chen ; Dept. of Electron. Eng., Nat. Chiao-Tung Univ., Hsinchu, Taiwan ; Jui-Yuan Yu ; Chien-Ying Yu ; Chen-Yi Lee

This work provides a dual-mode baseband transceiver chipset for wireless body area network (WBAN) system. The modulation schemes include multi-tone code division multiple access (MT-CDMA) and orthogonal frequency division multiplexing (OFDM) to meet multi-user coexistence (up to 8) and high data rate purposes. Based on the analysis of the WBAN operation behavior, several methods including higher data rate, optimal storage determination, and low power implementation techniques are proposed to reduce the transmission energy. To achieve tiny area integration, an embedded phase frequency tunable clock generator and frequency error pre-calibration scheme are provided to extend the frequency mismatch tolerance to 100 ppm (2.5 x of state-of-the-art systems). This chipset is manufactured in 90 nm standard CMOS process. Working at supply voltage of 0.5 V, this chipset is able to provide maximum date rate of 4.85 Mbps with modulator power consumption of 5.52 muW.

Published in:

Solid-State Circuits, IEEE Journal of  (Volume:44 ,  Issue: 11 )