By Topic

A Method to Estimate the Junction Temperature of Photodetectors Operating at High Photocurrent

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Hao Chen ; Dept. of Electr. & Comput. Eng., Univ. of Virginia, Charlottesville, VA, USA ; Andreas Beling ; Huapu Pan ; Joe C. Campbell

A method to estimate the junction temperature while operating at high photocurrent levels is presented. The relative responsivity change is measured at high operating current. Using a model for the temperature-dependence of the bandgap, a relation between the relative change in the output power and the internal junction temperature is derived. Good agreement between experimental data and simulations is achieved.

Published in:

IEEE Journal of Quantum Electronics  (Volume:45 ,  Issue: 12 )