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A comparative study on photovoltaic characterizations in crisscrossed-silicon-nanorod (CSNR) solar cells with an n-type-CSNR/intrinsic-CSNR/polycrystalline-silicon/p-type-Si(100)-stacked structure was demonstrated by means of the vapor-liquid-solid technique. Results reveal that an improved conversion efficiency of ~1.66% and an external quantum efficiency (EQE) of ~29% at 690 nm were obtained. The CSNR reflectance was lower than 2% for the 200-1100-nm wavelength range. By developing a proper growth time, the CSNR solar cell has a larger EQE. The mechanisms related to excellent light trapping and a larger EQE were mainly due to the CSNR microstructure.