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Low-Standby-Power Bulk MOSFET Design Using High- k Trench Isolation

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2 Author(s)
Vega, R.A. ; Dept. of Electr. Eng. & Comput. Sci., Univ. of California at Berkeley, Berkeley, CA, USA ; Tsu-Jae King Liu

High-permittivity trench isolation (HTI) is proposed as a means to achieve low off-state leakage current without a high-aspect-ratio or ultrathin body structure. The HTI provides for improved capacitive coupling between the gate and the active region sidewalls, which allows the steep-retrograde body-doping profile to be recessed while suppressing short-channel effects. The result is a lower body-doping concentration at the drain junction, resulting in ~ 10times lower band-to-band tunneling leakage than for a conventional bulk MOSFET design.

Published in:

Electron Device Letters, IEEE  (Volume:30 ,  Issue: 12 )