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In this letter, a new physical 1/f noise model is developed for double-stack high-k dielectric MOSFETs. This new model modifies the trapping-time-constant term in multistack unified noise model. Conventional 1/f noise model is built on the simple square potential approximation which did not account the electric field dependence on trapping time constant. The new model takes into account of a resultant tunneling process from the actual sloped potential in order to eliminate the discrepancies of dielectric trap density on the dielectric thickness and the gate bias. Our model successfully predicts 1/f noise data obtained from SiO2/HfO2 double-stack high- k devices with various gate-dielectric thicknesses using a single set of modeling parameter.