Cart (Loading....) | Create Account
Close category search window
 

Schottky Barrier Height of Nickel Silicide Contacts Formed on \hbox {Si}_{1 - x}\hbox {C}_{x} Epitaxial Layers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Alptekin, E. ; Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA ; Ozturk, Mehmet C.

Embedded Si1 - xCx source/drain junctions are currently considered to achieve electron mobility enhancement in nMOSFETs by inducing uniaxial tensile strain in the channel region. To utilize the mobility advantage of this technology, it is imperative to form low-resistivity contacts to Si1 - xCx alloys. In this letter, the electron and hole barrier heights at the NiSi/Si1 - xCx interface were measured up to a carbon concentration of 1.2%. The results indicate that the NiSi Fermi level moves away from the valence-band edge with increasing carbon concentration such that the hole barrier height increases by 68 meV in spite of the upward movement of the valence band. Within the same carbon concentration range, the electron barrier height decreases by as much as 170 meV, which is significant considering the exponential dependence of contact resistivity on barrier height.

Published in:

Electron Device Letters, IEEE  (Volume:30 ,  Issue: 12 )

Date of Publication:

Dec. 2009

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.